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Pattern generators are considered to be the most complex devices in mask making. High requirements for such equipment are met only with the help of high-end technology.
Scanning laser generators represent a new generation of multichannel laser pattern generators for making masks, reticles and direct writing on wafers without any die size limitation. The pattern generator enables to make high precision features on the mask, to write phase shift masks and optical proximity masks. Pattern generation time depends on die size only and is irrespective of the layer pattern complexity.

Production from 2012	7th generation: 90 nm technology node	EМ-5389 R_min=200 nm
Production from 2008	6th generation: 180 nm technology node	EМ-5289 R_min=350 nm
Production from 2005	5th generation: 350 nm technology node	EМ-5189 R_min=600 nm
Production from 1999	4th generation: 500 nm technology node	EМ-5089B R_min=800 nm
Production from 1994	3rd generation: 1.0 µm technology node	EМ-5089A R_min=1.0 µm
Production from 1988	2nd generation: 1.5 µm technology node	EМ-5089 R_min=1.5 µm
Production from 1988	1st generation: 2.0 µm technology node	EМ-589B R_min=2.0 µm

EМ-5389 Multichannel laser pattern generator

EМ-5289 Multichannel laser pattern generator

EМ-5189-01 Multichannel laser pattern generator

Special application pattern generator 特殊用途激光直寫(xiě)系統(tǒng)

A separate model line of laser pattern generators was developed by KBTEM-OMO for special applications in the semiconductor production.
Pattern generation is based on the microphotosetting principle.

EМ-5109 Laser pattern generator

EM-5009М Pattern generator

Automatic mask inspection 全自動(dòng)掩膜板檢測(cè)系統(tǒng)

Pattern inspection is of decisive significance in the semiconductor industry. Single microscopes as well as powerful optical systems are used for submicron structures. KBTEM-OMO developed a model line of systems for the automatic inspection of reticle patterns. Creation of the systems for the 45-60 nm technological node was a response to meet newest requirements of modern time.

Production from 2009	7th generation: 65-45 nm technology node	EМ-6729	R_min=65 nm
Production from 2008	6th generation: 110 nm technology node	EМ-6329B	R_min=150 nm
Production from 2006	5th generation: 180 nm technology node	EМ-6329R	R_min=250 nm
Production from 2001	4th generation: 350 nm technology node	EМ-6029B	R_min=500 nm
Production from 1995	3rd generation: 800 nm technology node	EМ-6029АМ	R_min=800 nm
Production from 1991	2nd generation: 1.0 µm technology node	EМ-6029А	R_min=1.0 µm
Production from 1987	1st generation: 1.5 µm technology node	EМ-6029	R_min=1.5 µm

EМ-6729 Automatic mask inspection system

ЭМ-6329 Automatic mask inspection system

EМ-6029B Automatic mask inspection system

EМ-6015M Automated photomask inspection system

Laser-based mask defect repair systems 掩膜板缺陷激光修復(fù)系統(tǒng)

The laser-based mask defect repair systems are intended to repair photomasks with transparent and opaque defects.
A contour-projection method is used to form an optical image for the repair of opaque defects. Transparent defects are repaired through the laser-stimulated vapor deposition of metal-organic compounds.
Defects are detected automatically on the bases of the defect file formed at the inspection stage.
The model line of the laser-based mask defect repair systems, developed and manufactured by the company, is presented in the table as follows:

Production from 2009	6th generation: 90 nm technology node	EМ-5131 R_min=200 nm
Production from 2007	5th generation: 180 nm technology node	EМ-5201 R_min=500 nm
Production from 2001	4th generation: 350 nm technology node	EМ-5001В R_min=500 nm
Production from 1995	3th generation: 500 nm technology node	EМ-5001AM R_min=1.1 µm
Production from 1990	2rd generation: 1.0 µm technology node	EМ-5001A R_min=1.5 µm
Production from 1990	1nd generation: 1.5 µm technology node	EМ-551B R_min=2.0 µm

EМ-5131 Laser-based mask defect repair system

EМ-5001В Laser-based mask defect repair system

Systems for inspection of work masks 掩膜板在線檢測(cè)系統(tǒng)

This class of equipment is intended for inspection of multiple work masks on the basis of master masks for series and low batch semiconductor production:
- Automated microsize inspection tool
- Mask pattern coordinates measurement system

EМ-6239-01 Automated micro size inspection system

EМ-6209 Mask pattern coordinates measurement system

Photorepeaters 光刻機(jī)

This class of equipment is intended for fabrication and inspection of step-and-repeat work masks on the basis of reticles for large-scale and low volume semiconductor production:
A contact printing system for patterning of work masks /under development/.

EМ-5062M Photorepeater

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掩膜板制作與檢測(cè)系統(tǒng)